Micro-machined deep silicon atomic vapor cells

Dyer, S. and Griffin, P. F. and Arnold, A. S. and Mirando, F. and Burt, D. P. and Riis, E. and McGilligan, J. P. (2022) Micro-machined deep silicon atomic vapor cells. Journal of Applied Physics, 132 (13). 134401. ISSN 0021-8979 (https://doi.org/10.1063/5.0114762)

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Abstract

Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a 6 mm deep atomic vapor cell. While the minimum silicon feature size was limited to a 1.5 mm width in these first generation vapor cells, we successfully demonstrate a two-chamber geometry by including a ∼ 25 mm meandering channel between the alkali pill chamber and the main interrogation chamber. We evaluate the impact of the channel conductance on the introduction of the alkali vapor density during the pill activation process and mitigate glass damage and pill contamination near the main chamber. Finally, we highlight the improved signal achievable in the 6 mm silicon cell compared to standard 2 mm path length silicon vapor cells.

ORCID iDs

Dyer, S., Griffin, P. F. ORCID logoORCID: https://orcid.org/0000-0002-0134-7554, Arnold, A. S. ORCID logoORCID: https://orcid.org/0000-0001-7084-6958, Mirando, F., Burt, D. P., Riis, E. ORCID logoORCID: https://orcid.org/0000-0002-3225-5302 and McGilligan, J. P. ORCID logoORCID: https://orcid.org/0000-0002-6514-9696;
  • Item type:Article
    ID code:82743
    Dates:
    Date
    Event
    7 October 2022
    Published
    3 October 2022
    Published Online
    7 September 2022
    Accepted
    26 July 2022
    Submitted
    Subjects:Science > Physics > Solid state physics. Nanoscience
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:13 Oct 2022 11:02
    Last modified:30 Nov 2024 14:21
    URI:https://strathprints.strath.ac.uk/id/eprint/82743
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