Evidence for spin memory in photoluminescence of room temperature vertical-cavity quantum dot gain structure

Doogan, J. and Phutthaprasartporn, S. and Clarke, E. and Ackemann, T.; (2021) Evidence for spin memory in photoluminescence of room temperature vertical-cavity quantum dot gain structure. In: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE Explore . IEEE, Piscataway, NJ.. ISBN 9781665418768 (https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021...)

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Abstract

Spin-optoelectronics is a rapidly developing field with promises to provide extra functionalities in communication and spectroscopy via ultrafast polarization modulation [1] . We are addressing the question of spin memory in InAs/GaAs quantum dots (QD) which can serve as gain structures for vertical-external cavity lasers (VECSELs), whereas most previous investigations focused on monolithic VCSELs. VECSELs offer possibilities not only for power scaling but also for additional flexibility as polarization controlling elements can be introduced into the free space sections [2] , [3] . Moreover QDs extend the wavelength coverage of GaAs based materials to the 1300 nm telecomm band with long spin lifetimes having been reported [4] . However, previous investigations concentrated on low temperatures and/or charged/doped dots and we are not aware of results on structures at strong excitation for lasing at room temperature.

ORCID iDs

Doogan, J., Phutthaprasartporn, S., Clarke, E. and Ackemann, T. ORCID logoORCID: https://orcid.org/0000-0003-2727-7395;
  • Item type:Book Section
    ID code:81391
    Dates:
    Date
    Event
    30 September 2021
    Published
    11 May 2021
    Accepted
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:07 Jul 2022 11:41
    Last modified:11 Nov 2024 15:29
    URI:https://strathprints.strath.ac.uk/id/eprint/81391
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