Short Wavelength GaInNAs/GaAs semiconductor disk lasers
Vetter, S.L. and Hastie, J.E. and Korpijarvi, V.M. and Puustinen, J. and Guina, M. and Okhotnikov, O. and Calvez, S. and Dawson, M.D. (2008) Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters, 44 (18). pp. 1069-1070. ISSN 0013-5194
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Abstract
The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.
ORCID iDs
Vetter, S.L., Hastie, J.E.
ORCID: https://orcid.org/0000-0002-4066-7411, Korpijarvi, V.M., Puustinen, J., Guina, M., Okhotnikov, O., Calvez, S. and Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989;
Item type: Article ID code: 8118 Dates: DateEvent28 August 2008PublishedKeywords: III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser, Optics. Light, Physics, Electrical and Electronic Engineering Subjects: Science > Physics > Optics. Light
Science > PhysicsDepartment: Faculty of Science > Physics > Institute of Photonics
Faculty of Science > PhysicsDepositing user: Miss Sharon Kelly Date deposited: 14 Dec 2009 11:24 Last modified: 20 Jan 2021 17:59 URI: https://strathprints.strath.ac.uk/id/eprint/8118
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