Short Wavelength GaInNAs/GaAs semiconductor disk lasers

Vetter, S.L. and Hastie, J.E. and Korpijarvi, V.M. and Puustinen, J. and Guina, M. and Okhotnikov, O. and Calvez, S. and Dawson, M.D. (2008) Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters, 44 (18). pp. 1069-1070. ISSN 0013-5194 (http://dx.doi.org/10.1049/el:20081488)

Full text not available in this repository.Request a copy

Abstract

The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

ORCID iDs

Vetter, S.L., Hastie, J.E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411, Korpijarvi, V.M., Puustinen, J., Guina, M., Okhotnikov, O., Calvez, S. and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
  • Item type:Article
    ID code:8118
    Dates:
    Date
    Event
    28 August 2008
    Published
    Keywords:III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser, Optics. Light, Physics, Electrical and Electronic Engineering
    Subjects:Science > Physics > Optics. Light
    Science > Physics
    Department:Faculty of Science > Physics > Institute of Photonics
    Faculty of Science > Physics
    Depositing user: Miss Sharon Kelly
    Date deposited:14 Dec 2009 11:24
    Last modified:31 Mar 2023 00:41
    URI:https://strathprints.strath.ac.uk/id/eprint/8118
CORE (COnnecting REpositories)