Short Wavelength GaInNAs/GaAs semiconductor disk lasers

Vetter, S.L. and Hastie, J.E. and Korpijarvi, V.M. and Puustinen, J. and Guina, M. and Okhotnikov, O. and Calvez, S. and Dawson, M.D. (2008) Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters, 44 (18). pp. 1069-1070. ISSN 0013-5194

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Abstract

The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

Author(s):Vetter, S.L., Hastie, J.E., Korpijarvi, V.M., Puustinen, J., Guina, M., Okhotnikov, O., Calvez, S. and Dawson, M.D.
Item type:Article
ID code:8118
Keywords:III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser, Optics. Light, Physics, Electrical and Electronic Engineering
Subjects:Science > Physics > Optics. Light
Science > Physics
Department:Faculty of Science > Physics > Institute of Photonics
Faculty of Science > Physics
Depositing user: Miss Sharon Kelly
Date deposited:14 Dec 2009 11:24
Last modified:03 Jan 2019 12:02
URI:https://strathprints.strath.ac.uk/id/eprint/8118
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