Short Wavelength GaInNAs/GaAs semiconductor disk lasers
Vetter, S.L. and Hastie, J.E. and Korpijarvi, V.M. and Puustinen, J. and Guina, M. and Okhotnikov, O. and Calvez, S. and Dawson, M.D. (2008) Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters, 44 (18). pp. 1069-1070. ISSN 0013-5194
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Abstract
The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.
| Creators(s): |
Vetter, S.L., Hastie, J.E.  ORCID: https://orcid.org/0000-0002-4066-7411, Korpijarvi, V.M., Puustinen, J., Guina, M., Okhotnikov, O., Calvez, S. and Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989;
| Item type: | Article |
|---|---|
| ID code: | 8118 |
| Keywords: | III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser, Optics. Light, Physics, Electrical and Electronic Engineering |
| Subjects: | Science > Physics > Optics. Light Science > Physics |
| Department: | Faculty of Science > Physics > Institute of Photonics Faculty of Science > Physics |
| Depositing user: | Miss Sharon Kelly |
| Date deposited: | 14 Dec 2009 11:24 |
| Last modified: | 17 Feb 2020 03:03 |
| URI: | https://strathprints.strath.ac.uk/id/eprint/8118 |
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