High-brightness long-wavelength semiconductor disk lasers
Schulz, N. and Hopkins, J.M. and Rattunde, M. and Burns, D. and Wagner, J. (2008) High-brightness long-wavelength semiconductor disk lasers. Laser and Photonics Reviews, 2 (3). pp. 160-181. ISSN 1863-8880 (http://dx.doi.org/10.1002/lpor.200710037)
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A review on the recent developments in the field of long-wavelength (A > 1.2 μm) high-brightness optically-pumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different III-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 μm and 5.3 μm are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.
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Item type: Article ID code: 8115 Dates: DateEvent2008PublishedKeywords: disk resonator, III-V semiconductors, IV-VI semiconductors, temperature effects, output power, infrared sources, radiation sources, vertical cavity laser, surface emitting lasers, optical pumping, semiconductor lasers, infrared, VECSEL, vertical external cavity surface emitting lasers, OPSDL, optically pumped semiconductor disk lasers, surface-emitting laser, quantum-well laser, finite-element-analysis, circular tem00 beams, solid-state lasers, high-power, thermal management, single-frequency, Optics. Light, Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics Subjects: Science > Physics > Optics. Light
Science > PhysicsDepartment: Faculty of Science > Physics > Institute of Photonics Depositing user: Miss Sharon Kelly Date deposited: 14 Dec 2009 10:09 Last modified: 19 May 2023 01:23 URI: https://strathprints.strath.ac.uk/id/eprint/8115