High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm

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Hopkins, J.M. and Hempler, N. and Rosener, B. and Schulz, N. and Rattunde, M. and Manz, C. and Kohler, K. and Wagner, J. and Burns, David (2008) High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm. Optics Letters, 33 (2). pp. 201-203. ISSN 0146-9592 (http://www.opticsinfobase.org/DirectPDFAccess/AC4D...)

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Abstract

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 m. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 m. The beam propagation parameter M2 was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.

  • Item type:Article
    ID code:8110
    Dates:
    Date
    Event
    15 January 2008
    Published
    Notes:Also available in print: http://suprimo.lib.strath.ac.uk/primo_library/libweb/action/display.do?ct=display&doc=SUVOY138015&indx=2&dum=true&scp.scps=scope%3A(SU)&vid=SUVU01&fn=search&dstmp=1261316684710&ct=search&indx=1&cs=frb&fctV=5674187&tab=local&frbg=5674187&fctN=facet_frbrgroupid&vl(freeText0)=optics%20letters&vl(54032236UI0)=lsr02&mode=Basic&dscnt=0&fromLogin=true&srt=rank&vl(69186824UI1)=all_items&doc=SUSFX954925609918
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Miss Sharon Kelly
    Date deposited:11 Jan 2010 12:45
    Last modified:11 Nov 2024 09:02
    URI:https://strathprints.strath.ac.uk/id/eprint/8110
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