InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Moriya, Paulo Hisao and Casula, Riccardo and Parrotta, Daniele C. and Chappell, George A. and Ranta, Sanna and Kahle, Hermann and Guina, Mircea and Hastie, Jennifer E.; (2020) InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm. In: OSA Technical Digest. Optical Society of America, USA. ISBN 978-1-943580-80-4 (https://doi.org/10.1364/FIO.2020.FW7F.2)

Abstract

We report low noise, sub-kHz linewidth operation of a compact AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL), designed for InGaN-diode-pumping at 44X nm. We achieve 150 mW at 689 nm, suitable for cooling neutral Strontium optical clocks.

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• Item metadata

  Item type:	Book Section
  ID code:	75326
  Dates:	Date Event 17 September 2020 Published 31 July 2020 Accepted
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Science > Physics > Institute of Photonics Faculty of Science > Physics Strategic Research Themes > Measurement Science and Enabling Technologies
  Depositing user:	Pure Administrator
  Date deposited:	04 Feb 2021 16:14
  Last modified:	21 Apr 2024 00:11
  Related URLs:	Event
  URI:	https://strathprints.strath.ac.uk/id/eprint/75326