InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Tools

Moriya, Paulo Hisao and Casula, Riccardo and Parrotta, Daniele C. and Chappell, George A. and Ranta, Sanna and Kahle, Hermann and Guina, Mircea and Hastie, Jennifer E.; (2020) InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm. In: OSA Technical Digest. Optical Society of America, USA. ISBN 978-1-943580-80-4 (https://doi.org/10.1364/FIO.2020.FW7F.2)

Full text not available in this repository.Request a copy

Abstract

We report low noise, sub-kHz linewidth operation of a compact AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL), designed for InGaN-diode-pumping at 44X nm. We achieve 150 mW at 689 nm, suitable for cooling neutral Strontium optical clocks.

ORCID iDs

Moriya, Paulo Hisao ORCID logoORCID: https://orcid.org/0000-0002-6761-191X, Casula, Riccardo ORCID logoORCID: https://orcid.org/0000-0003-4351-2906, Parrotta, Daniele C. ORCID logoORCID: https://orcid.org/0000-0002-5070-1062, Chappell, George A., Ranta, Sanna, Kahle, Hermann, Guina, Mircea and Hastie, Jennifer E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411;
CORE (COnnecting REpositories)