InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

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Moriya, Paulo H. and Casula, Riccardo and Chappell, George A. and Parrotta, Daniele C. and Ranta, Sanna and Kahle, Hermann and Guina, Mircea and Hastie, Jennifer E. (2021) InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm. Optics Express, 29 (3). pp. 3258-3268. ISSN 1094-4087 (https://doi.org/10.1364/OE.416210)

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Abstract

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

ORCID iDs

Moriya, Paulo H. ORCID logoORCID: https://orcid.org/0000-0002-6761-191X, Casula, Riccardo ORCID logoORCID: https://orcid.org/0000-0003-4351-2906, Chappell, George A., Parrotta, Daniele C. ORCID logoORCID: https://orcid.org/0000-0002-5070-1062, Ranta, Sanna, Kahle, Hermann, Guina, Mircea and Hastie, Jennifer E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411;
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