Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

Lin, Runze and Zhao, Desheng and Yu, Guohao and Liu, Xiaoyan and Wu, Dongdong and Gu, Erdan and Cui, Xugao and Liu, Ran and Zhang, Baoshun and Tian, Pengfei (2020) Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs. AIP Advances, 10 (10). 105317. ISSN 2158-3226 (https://doi.org/10.1063/5.0025587)

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In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.