Firm spin and parity assignments for high-lying, low-spin levels in stable Si isotopes

Sinclair, J. and Scheck, M. and Finch, S. W. and Krishichayan and Friman-Gayer, U. and Tornow, W. and Battaglia, G. and Beck, T. and Chapman, R. and Chishti, M. M. R. and Fransen, Ch. and Gonzales, R. and Hoemann, E. and Isaak, J. and Janssens, R. V. F. and Jaroszynski, D. A. and Johnson, S. and Jones, M. D. and Keatings, J. M. and Kelly, N. and Kleemann, J. and Little, D. and Löher, B. and Mashtakov, K. R. and Müscher, M. and O’Donnell, D. and Papst, O. and Peters, E. E. and Savran, D. and Schilling, M. and Schwengner, R. and Spagnoletti, P. and Spieker, M. and Werner, V. and Wilhelmy, J. and Wieland, O. and Yates, S. W. and Zilges, A. (2020) Firm spin and parity assignments for high-lying, low-spin levels in stable Si isotopes. European Physical Journal A, 56 (4). 105. ISSN 1434-6001

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    A natural silicon target was investigated in a natSi(γ, γ′) photon-scattering experiment with fully linearly-polarised, quasi-monochromatic γ rays in the entrance channel. The mean photon energies used were ⟨ Eγ⟩ = 9.33, 9.77, 10.17, 10.55, 10.93, and 11.37 MeV, and the relative energy spread (full width at half maximum) of the incident beam was ΔEγ/ ⟨ Eγ⟩ ≈ 3.5–4 %. The observed angular distributions for the ground-state decay allow firm spin and parity assignments for several levels of the stable even-even silicon isotopes.

    ORCID iDs

    Sinclair, J., Scheck, M., Finch, S. W., Krishichayan, Friman-Gayer, U., Tornow, W., Battaglia, G. ORCID logoORCID:, Beck, T., Chapman, R., Chishti, M. M. R., Fransen, Ch., Gonzales, R., Hoemann, E., Isaak, J., Janssens, R. V. F., Jaroszynski, D. A. ORCID logoORCID:, Johnson, S., Jones, M. D., Keatings, J. M., Kelly, N., Kleemann, J., Little, D., Löher, B., Mashtakov, K. R., Müscher, M., O’Donnell, D., Papst, O., Peters, E. E., Savran, D., Schilling, M., Schwengner, R., Spagnoletti, P., Spieker, M., Werner, V., Wilhelmy, J., Wieland, O., Yates, S. W. and Zilges, A.;