High-power, high-voltage IGBT applications: series connection of IGBTs or multilevel converters?
Massoud, A. and Finney, S.J. and Williams, B.W. (2003) High-power, high-voltage IGBT applications: series connection of IGBTs or multilevel converters? International Journal of Electronics, 90 (11-12). pp. 763-778. ISSN 0020-7217 (http://dx.doi.org/10.1080/00207210310001666429)
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In this paper a detailed quantitative comparison between two competing high-voltage converter technologies is performed, namely series connection of semiconductor power devices versus multilevel converters. The comparison is based on converter losses (conduction and switching), total harmonic distortion, and distortion factor for the output phase and line voltages at different modulation frequency ratios. A new method is presented for calculating the conduction loss of cascaded-type multilevel converters which use carrier-based pulse width modulation.
ORCID iDs
Massoud, A., Finney, S.J. ORCID: https://orcid.org/0000-0001-5039-3533 and Williams, B.W.;-
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Item type: Article ID code: 7124 Dates: DateEventNovember 2003PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Strathprints Administrator Date deposited: 07 Nov 2008 Last modified: 11 Nov 2024 08:41 URI: https://strathprints.strath.ac.uk/id/eprint/7124