Low-voltage high-transconductance dinaphtho-[2,3-b:2',3'-f]thieno [3,2-b]thiophene (DNTT) transistors on polyethylene naphthalate (PEN) foils

Tools

Ishaku, Amayikai A. and Al Ruzaiqi, Afra and Gleskova, Helena (2019) Low-voltage high-transconductance dinaphtho-[2,3-b:2',3'-f]thieno [3,2-b]thiophene (DNTT) transistors on polyethylene naphthalate (PEN) foils. In: IEEE International Conference on Flexible and Printable Sensors and Systems, 2019-07-07 - 2019-07-10. (https://doi.org/10.1109/FLEPS.2019.8792248)

[thumbnail of Ishaku-etal-IEEE-FLEPS-2019-Low-voltage-high-transconductance-DNTT-transistors]
Preview
 Text. Filename: Ishaku_etal_IEEE_FLEPS_2019_Low_voltage_high_transconductance_DNTT_transistors.pdf
Accepted Author Manuscript
Download (625kB)| Preview

Abstract

Low threshold voltage, high transconductance DNTT transistors (OTFTs) with interdigitated source/drain contacts can provide low-voltage transistor amplifiers with a.c. cut-off frequency in excess of 10 kHz [1], making them suitable for wearable sensors. This paper presents an in-depth study of the geometry of such transistors fabricated on PEN. Changes in channel width-to-length ratio W/L were achieved by varying the W from ~12 to ~18 mm and L from 20 to 50 μm, leading to W/L of ~300 to ~900. The OTFTs exhibit threshold voltage from −0.33 to −0.74 V, field-effect mobility from 0.17 to 0.42 cm2/V·s, on-current from 28 to 67 μA (at VGS = VDS = −2 V), off-current from 6×10-12 to 7×10-8 A, and subthreshold slope from 65 to 266 mV/decade. While the OTFTs exhibit large on-state drain current and a.c. transconductance, smaller L leads to a slightly reduced mobility. In addition, the OTFTs with the largest W of 18.23 mm possess the lowest off-state drain current and subthreshold slope.

ORCID iDs

Ishaku, Amayikai A., Al Ruzaiqi, Afra and Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639;
  • Item type:Conference or Workshop Item(Paper)
    ID code:68867
    Dates:
    Date
    Event
    10 July 2019
    Published
    13 May 2019
    Accepted
    Notes:© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
    Department:Faculty of Engineering > Electronic and Electrical Engineering
    Depositing user: Pure Administrator
    Date deposited:16 Jul 2019 14:07
    Last modified:11 Nov 2024 16:58
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/68867
CORE (COnnecting REpositories)