Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Rossi, A. and Zhao, R. and Dzurak, A. S. and Gonzalez-Zalba, M. F. (2017) Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor. Applied Physics Letters, 110 (21). 212101. ISSN 0003-6951

[img]
Preview
Text (Rossi-etal-APL-2017-Dispersive-readout-of-a-silicon-quantum-dot-with-an-accumulation)
Rossi_etal_APL_2017_Dispersive_readout_of_a_silicon_quantum_dot_with_an_accumulation.pdf
Accepted Author Manuscript

Download (1MB)| Preview

    Abstract

    Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.