Radio-frequency capacitive gate-based sensing

Ahmed, Imtiaz and Haigh, James A. and Schaal, Simon and Barraud, Sylvain and Zhu, Yi and Lee, Chang-min and Amado, Mario and Robinson, Jason W.A. and Rossi, Alessandro and Morton, John J.L. and Gonzalez-Zalba, M. Fernando (2018) Radio-frequency capacitive gate-based sensing. Physical Review Applied, 10 (1). 014018. ISSN 2331-7019

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    Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded Q factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3μe/Hz, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.

    ORCID iDs

    Ahmed, Imtiaz, Haigh, James A., Schaal, Simon, Barraud, Sylvain, Zhu, Yi, Lee, Chang-min, Amado, Mario, Robinson, Jason W.A., Rossi, Alessandro ORCID logoORCID:, Morton, John J.L. and Gonzalez-Zalba, M. Fernando;