Low-voltage organic thin-film transistors based on [n]phenacenes

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Al Ruzaiqi, Afra and Okamoto, Hideki and Kubozono, Yoshihiro and Zschieschang, Ute and Klauk, Hagen and Baran, Peter and Gleskova, Helena (2019) Low-voltage organic thin-film transistors based on [n]phenacenes. Organic Electronics, 73. pp. 286-291. ISSN 1566-1199 (https://doi.org/10.1016/j.orgel.2019.06.021)

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Abstract

Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V·s for transistors on glass and 0.092 cm2/V·s for transistors on flexible PEN.

ORCID iDs

Al Ruzaiqi, Afra, Okamoto, Hideki, Kubozono, Yoshihiro, Zschieschang, Ute, Klauk, Hagen, Baran, Peter and Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639;
CORE (COnnecting REpositories)