Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond

Zhang, Jingyuan Linda and Sun, Shuo and Burek, Michael J. and Dory, Constantin and Tzeng, Yan-Kai and Fischer, Kevin A. and Kelaita, Yousif and Lagoudakis, Konstantinos G. and Radulaski, Marina and Shen, Zhi-Xun and Melosh, Nicholas A. and Chu, Steven and Lončar, Marko and Vučković, Jelena (2018) Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond. Nano Letters, 18 (2). pp. 1360-1365. ISSN 1530-6992

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    Abstract

    Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.