Near-threshold dielectronic recombination studies of Si-like ions

Kaur, J. and Gorczyca, T. W. and Badnell, N. R. (2015) Near-threshold dielectronic recombination studies of Si-like ions. Journal of Physics: Conference Series, 635 (5). 052074. ISSN 1742-6588

[img]
Preview
Text (Kaur-etal-JPCS2015-near-threshold-dielectronic-recombination-studies-of-Si-like-ions)
Kaur_etal_JPCS2015_near_threshold_dielectronic_recombination_studies_of_Si_like_ions.pdf
Final Published Version
License: Creative Commons Attribution 3.0 logo

Download (265kB)| Preview

    Abstract

    Dielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S2+.