Towards lasing on a silicon chip : gallium and its alloy or rare earth doped gallium nitride as the solution?

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Ahmed, Md Shakil and Glesk, Ivan; Kumar, Rakesh, ed. (2015) Towards lasing on a silicon chip : gallium and its alloy or rare earth doped gallium nitride as the solution? In: Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015. Institute of Research Engineers and Doctors, USA, GBR, pp. 25-29. ISBN 978-1-63248-061-3 (https://doi.org/10.15224/978-1-63248-061-3-16)

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Abstract

Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.

ORCID iDs

Ahmed, Md Shakil ORCID logoORCID: https://orcid.org/0000-0002-0473-7865 and Glesk, Ivan ORCID logoORCID: https://orcid.org/0000-0002-3176-8069; Kumar, Rakesh
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