Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Zhang, Shuailong and Xie, Enyuan and Yan, Tongxin and Yang, Wei and Herrnsdorf, Johannes and Gong, Zheng and Watson, Ian M. and Gu, Erdan and Dawson, Martin and Hu, Xiaodong (2015) Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection. Journal of Applied Physics, 118 (12). 125709. ISSN 0021-8979 (https://doi.org/10.1063/1.4931575)

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Abstract

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

ORCID iDs

Zhang, Shuailong, Xie, Enyuan ORCID logoORCID: https://orcid.org/0000-0001-7776-8091, Yan, Tongxin, Yang, Wei, Herrnsdorf, Johannes ORCID logoORCID: https://orcid.org/0000-0002-3856-5782, Gong, Zheng, Watson, Ian M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Gu, Erdan ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Dawson, Martin ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Hu, Xiaodong;
CORE (COnnecting REpositories)