Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Tian, Pengfei and McKendry, Jonathan J. D. and Herrnsdorf, Johannes and Watson, Scott and Ferreira, Ricardo and Watson, Ian M. and Gu, Erdan and Kelly, Anthony E. and Dawson, Martin D. (2014) Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes. Applied Physics Letters, 105 (17). 171107. ISSN 0003-6951

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    Abstract

    Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.