Thienoacene dimers based on the thieno[3,2-b]thiophene moiety : synthesis, characterization and electronic properties

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Niebel, Claude and Kim, Yeongin and Ruzié, Christian and Karpinska, Jolanta and Chattopadhyay, Basab and Schweicher, Guillaume and Richard, Audrey and Lemaur, Vincent and Olivier, Yoann and Cornil, Jérôme and Kennedy, Alan R. and Diao, Ying and Lee, Wen-Ya and Mannsfeld, Stefan and Bao, Zhenan and Geerts, Yves H. (2015) Thienoacene dimers based on the thieno[3,2-b]thiophene moiety : synthesis, characterization and electronic properties. Journal of Materials Chemistry. C, 3 (3). pp. 674-685. ISSN 2050-7534 (https://doi.org/10.1039/c4tc02158d)

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Abstract

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.

ORCID iDs

Niebel, Claude, Kim, Yeongin, Ruzié, Christian, Karpinska, Jolanta, Chattopadhyay, Basab, Schweicher, Guillaume, Richard, Audrey, Lemaur, Vincent, Olivier, Yoann, Cornil, Jérôme, Kennedy, Alan R. ORCID logoORCID: https://orcid.org/0000-0003-3652-6015, Diao, Ying, Lee, Wen-Ya, Mannsfeld, Stefan, Bao, Zhenan and Geerts, Yves H.;
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