Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

Sun, H.D. and Calvez, S. and Dawson, M.D. and Gupta, J.A. and Sproule, G.I. and Wu, X. and Wasilewski, Z.R. (2006) Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy. In: International Conference on the Physics of Semiconductor 2006, 2006-07-01.

Full text not available in this repository.Request a copy from the Strathclyde author

Abstract

Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

ORCID iDs

Sun, H.D., Calvez, S., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Gupta, J.A., Sproule, G.I., Wu, X. and Wasilewski, Z.R.;