Novel 1.3um GaInNAs surface-normal devices

Calvez, S. and Laurand, N. and Smith, S.A. and Clark, A.H. and Hopkins, J.M. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) Novel 1.3um GaInNAs surface-normal devices. In: European Materials Research Society 2004 Spring Meeting, 2004-05-24 - 2004-05-28.

Full text not available in this repository.Request a copy

Abstract

The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

ORCID iDs

Calvez, S., Laurand, N. ORCID logoORCID: https://orcid.org/0000-0003-0486-4300, Smith, S.A., Clark, A.H., Hopkins, J.M., Sun, H.D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Jouhti, T., Kontinnen, J. and Pessa, M.;
CORE (COnnecting REpositories)