1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier
Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2003) 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, pp. 243-246. ISBN 0-7803-7704-4
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We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
| Author(s): | Calvez, S., Clark, A.H., Hopkins, J.M., Macaluso, R., Merlin, P., Sun, H.D., Dawson, M.D., Jouhti, T. and Pessa, M. | Item type: | Book Section |
|---|---|
| ID code: | 5346 |
| Keywords: | semiconductors, gallium arsenide, indium compounds, optical pumping, surface emitting lasers, optics, lasers, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics > Institute of Photonics Unknown Department |
| Depositing user: | Strathprints Administrator |
| Date deposited: | 12 Feb 2008 |
| Last modified: | 03 Jan 2019 11:27 |
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| URI: | https://strathprints.strath.ac.uk/id/eprint/5346 |
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