1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M.; (2003) 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, pp. 243-246. ISBN 0-7803-7704-4

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Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

ORCID iDs

Calvez, S., Clark, A.H., Hopkins, J.M., Macaluso, R., Merlin, P., Sun, H.D., Dawson, M.D.

, Jouhti, T. and Pessa, M.;

Item metadata

Item type:	Book Section
ID code:	5346
Dates:	Date Event 2003 Published
Keywords:	semiconductors, gallium arsenide, indium compounds, optical pumping, surface emitting lasers, optics, lasers, Optics. Light
Subjects:	Science > Physics > Optics. Light
Department:	Faculty of Science > Physics > Institute of Photonics Unknown Department
Depositing user:	Strathprints Administrator
Date deposited:	12 Feb 2008
Last modified:	01 Jan 2021 13:57
Related URLs:	http://ieeexplore.ieee.org/xpl/RecentCon...
URI:	https://strathprints.strath.ac.uk/id/eprint/5346

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