1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier
Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M.; (2003) 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, pp. 243-246. ISBN 0-7803-7704-4
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We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
Creators(s): |
Calvez, S., Clark, A.H., Hopkins, J.M., Macaluso, R., Merlin, P., Sun, H.D., Dawson, M.D. ![]() | Item type: | Book Section |
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ID code: | 5346 |
Keywords: | semiconductors, gallium arsenide, indium compounds, optical pumping, surface emitting lasers, optics, lasers, Optics. Light |
Subjects: | Science > Physics > Optics. Light |
Department: | Faculty of Science > Physics > Institute of Photonics Unknown Department |
Depositing user: | Strathprints Administrator |
Date deposited: | 12 Feb 2008 |
Last modified: | 01 Jan 2021 13:57 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/5346 |
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