Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Tian, Pengfei and McKendry, Jonathan J. D. and Gong, Zheng and Zhang, Shuailong and Watson, S. and Zhu, Dandan and Watson, Ian M. and Gu, Erdan and Kelly, Anothony E. and Humphreys, Colin J. and Dawson, Martin D. (2013) Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. In: 2013 26th IEEE Photonics Conference, IPC 2013, 2013-09-08 - 2013-09-12.

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    Abstract

    InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.