Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Tian, Pengfei and McKendry, Jonathan J. D. and Gong, Zheng and Zhang, Shuailong and Watson, S. and Zhu, Dandan and Watson, Ian M. and Gu, Erdan and Kelly, Anothony E. and Humphreys, Colin J. and Dawson, Martin D. (2013) Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. In: 2013 26th IEEE Photonics Conference, IPC 2013, 2013-09-08 - 2013-09-12. (https://doi.org/10.1109/IPCon.2013.6656387)

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Abstract

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

ORCID iDs

McKendry, Jonathan J. D. ORCID: https://orcid.org/0000-0002-6379-3955

Watson, S. ORCID: https://orcid.org/0000-0002-1082-4957

Watson, Ian M. ORCID: https://orcid.org/0000-0002-8797-3993

Gu, Erdan ORCID: https://orcid.org/0000-0002-7607-9902

Dawson, Martin D. ORCID: https://orcid.org/0000-0002-6639-2989

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  Item type:	Conference or Workshop Item(Other)
  ID code:	52729
  Dates:	Date Event 8 September 2013 Published
  Notes:	(c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics Faculty of Science > Pure and Applied Chemistry Technology and Innovation Centre > Photonics
  Depositing user:	Pure Administrator
  Date deposited:	17 Apr 2015 14:54
  Last modified:	15 Dec 2024 01:53
  Related URLs:	Event
  URI:	https://strathprints.strath.ac.uk/id/eprint/52729