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Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Herrnsdorf, Johannes and McKendry, Jonathan J. D. and Zhang, Shuailong and Xie, Enyuan and Ferreira, Ricardo and Massoubre, David and Zuhdi, Ahmad Mahmood and Henderson, Robert K. and Underwood, Ian and Watson, Scott and Kelly, Anthony E. and Gu, Erdan and Dawson, Martin D. (2015) Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62 (6). pp. 1918-1925. ISSN 0018-9383

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Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

Item type: Article
ID code: 52598
Keywords: CMOS integrated circuits, displays, flip-chip devices, integrated optoelectronics, light-emitting diodes (LEDs)., Optics. Light, Electronic, Optical and Magnetic Materials
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics > Institute of Photonics
Faculty of Science > Physics
Faculty of Science > Pure and Applied Chemistry
Faculty of Humanities and Social Sciences (HaSS) > School of Law > Law
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date deposited: 13 Apr 2015 14:45
Last modified: 20 Apr 2019 03:30
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URI: https://strathprints.strath.ac.uk/id/eprint/52598
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