Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Herrnsdorf, Johannes and McKendry, Jonathan J. D. and Zhang, Shuailong and Xie, Enyuan and Ferreira, Ricardo and Massoubre, David and Zuhdi, Ahmad Mahmood and Henderson, Robert K. and Underwood, Ian and Watson, Scott and Kelly, Anthony E. and Gu, Erdan and Dawson, Martin D. (2015) Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62 (6). pp. 1918-1925. ISSN 0018-9383 (https://doi.org/10.1109/TED.2015.2416915)

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Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

ORCID iDs

Herrnsdorf, Johannes ORCID logoORCID: https://orcid.org/0000-0002-3856-5782, McKendry, Jonathan J. D. ORCID logoORCID: https://orcid.org/0000-0002-6379-3955, Zhang, Shuailong, Xie, Enyuan ORCID logoORCID: https://orcid.org/0000-0001-7776-8091, Ferreira, Ricardo ORCID logoORCID: https://orcid.org/0000-0003-1731-1588, Massoubre, David, Zuhdi, Ahmad Mahmood, Henderson, Robert K., Underwood, Ian, Watson, Scott ORCID logoORCID: https://orcid.org/0000-0002-1082-4957, Kelly, Anthony E., Gu, Erdan ORCID logoORCID: https://orcid.org/0000-0002-7607-9902 and Dawson, Martin D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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