High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes
Jeon, C.W. and Choi, H.W. and Gu, E. and Dawson, M.D. (2004) High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes. IEEE Photonics Technology Letters, 16 (11). pp. 2421-2423. ISSN 1041-1135 (http://dx.doi.org/10.1109/LPT.2004.835626)
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We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.
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Item type: Article ID code: 5253 Dates: DateEvent18 October 2004PublishedSubjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics > Institute of Photonics Depositing user: Strathprints Administrator Date deposited: 30 Jan 2008 Last modified: 08 Apr 2024 15:54 URI: https://strathprints.strath.ac.uk/id/eprint/5253