High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes

Jeon, C.W. and Choi, H.W. and Gu, E. and Dawson, M.D. (2004) High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes. IEEE Photonics Technology Letters, 16 (11). pp. 2421-2423. ISSN 1041-1135

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Abstract

We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.

Author(s):Jeon, C.W., Choi, H.W., Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902 and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989
Item type:Article
ID code:5253
Keywords:AlInGaN-based light-emitting diodes, high-density light-emitting diodes, i-line UV light source, light-emitting diode fabrication, mask-free exposure, matrix driver circuit, matrix-addressable light-emitting diodes, matrix-addressed format, microarray light-emitting diodes, photolithographic exposure, ultraviolet light-emitting diodes, Optics. Light, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
Subjects:Science > Physics > Optics. Light
Department:Faculty of Science > Physics > Institute of Photonics
Depositing user: Strathprints Administrator
Date deposited:30 Jan 2008
Last modified:08 Nov 2019 05:37
URI:https://strathprints.strath.ac.uk/id/eprint/5253
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