High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes

Jeon, C.W. and Choi, H.W. and Gu, E. and Dawson, M.D. (2004) High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes. IEEE Photonics Technology Letters, 16 (11). pp. 2421-2423. ISSN 1041-1135 (http://dx.doi.org/10.1109/LPT.2004.835626)

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Abstract

We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.

ORCID iDs

Jeon, C.W., Choi, H.W., Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902 and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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