Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

Boyall, N.M. and Durose, K. and Liu, T.Y. and Trampert, A. and Watson, I.M. (2003) Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells. Institute of Physics Conference Series, 180. pp. 289-292. ISSN 0951-3248

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Abstract

A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

ORCID iDs

Boyall, N.M., Durose, K., Liu, T.Y., Trampert, A. and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993;