A novel fabrication method for a 64x64 matrix-addressable GaN-based micro-LED array
Jeon, C.W. and Choi, H.W. and Dawson, M.D. (2003) A novel fabrication method for a 64x64 matrix-addressable GaN-based micro-LED array. Physica Status Solidi A, 200 (1). pp. 79-82. ISSN 1862-6300 (http://dx.doi.org/10.1002/pssa.200303292)
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The fabrication and performance of GaN-based micro-light emitting diode (-LED) arrays with 64 × 64 elements is reported. The diameter of each element is 20 m and center-to-center spacing 30 m, giving an overall active area of the arrays of 80425 m2. Through a novel fabrication approach including a isotropic dry etching and a self-aligned isolation technique, we could easily obtain an interconnection for a matrix-addressable array device. The arrays emit >50 W per element at 3 mA drive current. Adopting a spreading metal as a p-contact, the turn-on voltage was lowered down to 3.4 V.
ORCID iDs
Jeon, C.W., Choi, H.W. and Dawson, M.D.
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Item type: Article ID code: 5233 Dates: DateEvent29 September 2003PublishedKeywords: GaN-based microlight emitting diode, LED fabrication, LED performance, Optics. Light, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics Subjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics > Institute of Photonics Depositing user: Strathprints Administrator Date deposited: 25 Jan 2008 Last modified: 30 Mar 2023 07:46 URI: https://strathprints.strath.ac.uk/id/eprint/5233