A novel fabrication method for a 64x64 matrix-addressable GaN-based micro-LED array

Jeon, C.W. and Choi, H.W. and Dawson, M.D. (2003) A novel fabrication method for a 64x64 matrix-addressable GaN-based micro-LED array. Physica Status Solidi A, 200 (1). pp. 79-82. ISSN 1862-6300 (http://dx.doi.org/10.1002/pssa.200303292)

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Abstract

The fabrication and performance of GaN-based micro-light emitting diode (-LED) arrays with 64 × 64 elements is reported. The diameter of each element is 20 m and center-to-center spacing 30 m, giving an overall active area of the arrays of 80425 m2. Through a novel fabrication approach including a isotropic dry etching and a self-aligned isolation technique, we could easily obtain an interconnection for a matrix-addressable array device. The arrays emit >50 W per element at 3 mA drive current. Adopting a spreading metal as a p-contact, the turn-on voltage was lowered down to 3.4 V.

ORCID iDs

Jeon, C.W., Choi, H.W. and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
  • Item type:Article
    ID code:5233
    Dates:
    Date
    Event
    29 September 2003
    Published
    Keywords:GaN-based microlight emitting diode, LED fabrication, LED performance, Optics. Light, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:25 Jan 2008
    Last modified:30 Mar 2023 07:46
    URI:https://strathprints.strath.ac.uk/id/eprint/5233
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