Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

Henderson, R.K. and Rae, B.R. and Li, D.-U; (2014) Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM). In: High Performance Silicon Imaging. Elsevier, pp. 312-347. ISBN 9780857095985 (https://doi.org/10.1533/9780857097521.2.312)

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Abstract

This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which CMOS technology has sought to complement these technologies by providing low-cost, robust and miniaturized sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors

ORCID iDs

Henderson, R.K., Rae, B.R. and Li, D.-U ORCID logoORCID: https://orcid.org/0000-0002-6401-4263;
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