Numerical optimization of an active voltage controller for high-power IGBT converters
Bryant, A.T. and Wang, Y. and Finney, S.J. and Lim, T.C. and Palmer, P.R. (2007) Numerical optimization of an active voltage controller for high-power IGBT converters. IEEE Transactions on Power Electronics, 22 (2). pp. 374-383. ISSN 0885-8993 (http://dx.doi.org/10.1109/TPEL.2006.889895)
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Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper.
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Item type: Article ID code: 5159 Dates: DateEventMarch 2007PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Strathprints Administrator Date deposited: 14 Jan 2008 Last modified: 08 Apr 2024 16:13 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/5159