Numerical optimization of an active voltage controller for high-power IGBT converters

Bryant, A.T. and Wang, Y. and Finney, S.J. and Lim, T.C. and Palmer, P.R. (2007) Numerical optimization of an active voltage controller for high-power IGBT converters. IEEE Transactions on Power Electronics, 22 (2). pp. 374-383. ISSN 0885-8993 (http://dx.doi.org/10.1109/TPEL.2006.889895)

Full text not available in this repository.Request a copy

Abstract

Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper.

ORCID iDs

Bryant, A.T., Wang, Y., Finney, S.J. ORCID logoORCID: https://orcid.org/0000-0001-5039-3533, Lim, T.C. ORCID logoORCID: https://orcid.org/0000-0001-6535-0368 and Palmer, P.R.;
CORE (COnnecting REpositories)