Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

Trindade, Antonio Jose Marques and Guilhabert, Benoit Jack Eloi and Massoubre, David and Zhu, Dandan and Laurand, Nicolas and Gu, Erdan and Watson, Ian and Humphreys, Colin J and Dawson, Martin (2013) Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Applied Physics Letters, 103 (25). 253302. ISSN 0003-6951 (https://doi.org/10.1063/1.4851875)

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Abstract

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.

ORCID iDs

Trindade, Antonio Jose Marques, Guilhabert, Benoit Jack Eloi ORCID logoORCID: https://orcid.org/0000-0002-3986-8566, Massoubre, David, Zhu, Dandan, Laurand, Nicolas ORCID logoORCID: https://orcid.org/0000-0003-0486-4300, Gu, Erdan ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Watson, Ian ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Humphreys, Colin J and Dawson, Martin ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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