Semiconductor mode-locked lasers with integrated dispersion control
Strain, M.J. and Stolarz, P.M. and Sorel, M. (2011) Semiconductor mode-locked lasers with integrated dispersion control. In: 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, 2011-05-22 - 2011-05-26. (https://doi.org/10.1109/CLEOE.2011.5942586)
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Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.
ORCID iDs
Strain, M.J. ORCID: https://orcid.org/0000-0002-9752-3144, Stolarz, P.M. and Sorel, M.;-
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Item type: Conference or Workshop Item(Paper) ID code: 45252 Dates: DateEvent1 January 2011PublishedSubjects: Science > Physics
Technology > Electrical engineering. Electronics Nuclear engineeringDepartment: Faculty of Science > Physics > Institute of Photonics Depositing user: Pure Administrator Date deposited: 18 Oct 2013 13:03 Last modified: 11 Nov 2024 16:37 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/45252