Shear instability of nanocrystalline silicon carbide during nanometric cutting
Goel, Saurav and Luo, Xichun and Reuben, Robert L (2012) Shear instability of nanocrystalline silicon carbide during nanometric cutting. Applied Physics Letters, 100. ISSN 0003-6951
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The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
| Author(s): | Goel, Saurav, Luo, Xichun  ORCID: https://orcid.org/0000-0002-5024-7058 and Reuben, Robert L | Item type: | Article |
|---|---|
| ID code: | 44794 |
| Keywords: | shear instability, nanocrystalline, silicon carbide, nanometric cutting, Engineering design, Industrial and Manufacturing Engineering |
| Subjects: | Technology > Engineering (General). Civil engineering (General) > Engineering design |
| Department: | Faculty of Engineering > Design, Manufacture and Engineering Management |
| Depositing user: | Pure Administrator |
| Date deposited: | 12 Sep 2013 10:30 |
| Last modified: | 17 Jan 2020 04:52 |
| URI: | https://strathprints.strath.ac.uk/id/eprint/44794 |
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