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Shear instability of nanocrystalline silicon carbide during nanometric cutting

Goel, Saurav and Luo, Xichun and Reuben, Robert L (2012) Shear instability of nanocrystalline silicon carbide during nanometric cutting. Applied Physics Letters, 100. ISSN 0003-6951

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Abstract

The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.

Item type: Article
ID code: 44794
Keywords: shear instability, nanocrystalline, silicon carbide, nanometric cutting, Engineering design, Industrial and Manufacturing Engineering
Subjects: Technology > Engineering (General). Civil engineering (General) > Engineering design
Department: Faculty of Engineering > Design, Manufacture and Engineering Management
Depositing user: Pure Administrator
Date deposited: 12 Sep 2013 10:30
Last modified: 29 Mar 2019 03:20
URI: https://strathprints.strath.ac.uk/id/eprint/44794
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