Shear instability of nanocrystalline silicon carbide during nanometric cutting
Goel, Saurav and Luo, Xichun and Reuben, Robert L (2012) Shear instability of nanocrystalline silicon carbide during nanometric cutting. Applied Physics Letters, 100. ISSN 0003-6951
Full text not available in this repository.Request a copy from the Strathclyde authorAbstract
The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
ORCID iDs
Goel, Saurav, Luo, Xichun
Item type: Article ID code: 44794 Dates: DateEvent2012PublishedKeywords: shear instability, nanocrystalline, silicon carbide, nanometric cutting, Engineering design, Industrial and Manufacturing Engineering Subjects: Technology > Engineering (General). Civil engineering (General) > Engineering design Department: Faculty of Engineering > Design, Manufacture and Engineering Management Depositing user: Pure Administrator Date deposited: 12 Sep 2013 10:30 Last modified: 09 Apr 2021 02:21 URI: https://strathprints.strath.ac.uk/id/eprint/44794