High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier
Akbar, Jehan and Hou, Lianping and Haji, Mohsin and Strain, Michael and Marsh, J.H. and Bryce, A.C. and Kelly, A.E. (2013) High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier. IEEE Photonics Technology Letters, 25 (3). 253 - 256. ISSN 1041-1135
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We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.
Creators(s): |
Akbar, Jehan, Hou, Lianping, Haji, Mohsin, Strain, Michael ![]() | Item type: | Article |
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ID code: | 44426 |
Keywords: | III-V semiconductors, aluminium compounds, distributed Bragg reflector lasers, mode-locked laser, optical pulse generation, Physics, Atomic and Molecular Physics, and Optics |
Subjects: | Science > Physics |
Department: | Faculty of Science > Physics > Institute of Photonics |
Depositing user: | Pure Administrator |
Date deposited: | 31 Jul 2013 15:30 |
Last modified: | 20 Jan 2021 20:46 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/44426 |
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