High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier

Akbar, Jehan and Hou, Lianping and Haji, Mohsin and Strain, Michael and Marsh, J.H. and Bryce, A.C. and Kelly, A.E. (2013) High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier. IEEE Photonics Technology Letters, 25 (3). 253 - 256. ISSN 1041-1135

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Abstract

We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.

Creators(s): Akbar, Jehan, Hou, Lianping, Haji, Mohsin, Strain, Michael ORCID logoORCID: https://orcid.org/0000-0002-9752-3144, Marsh, J.H., Bryce, A.C. and Kelly, A.E.;
Item type:Article
ID code:44426
Keywords:III-V semiconductors, aluminium compounds, distributed Bragg reflector lasers, mode-locked laser, optical pulse generation, Physics, Atomic and Molecular Physics, and Optics
Subjects:Science > Physics
Department:Faculty of Science > Physics > Institute of Photonics
Depositing user: Pure Administrator
Date deposited:31 Jul 2013 15:30
Last modified:07 Sep 2020 03:05
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URI:https://strathprints.strath.ac.uk/id/eprint/44426
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