Modulational instability in a silicon-on-insulator directional coupler : role of the coupling-induced group velocity dispersion

Ding, Wei and Staines, Owain K and Hobbs, Gareth D and Gorbach, Andriy V and De Nobriga, Charles and Wadsworth, William J and Knight, Jonathan C and Skryabin, Dmitry V and Strain, Michael and Sorel, M. (2012) Modulational instability in a silicon-on-insulator directional coupler : role of the coupling-induced group velocity dispersion. Optics Letters, 37 (4). pp. 668-670. (https://doi.org/10.1364/OL.37.000668)

Full text not available in this repository.Request a copy

Abstract

We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires decreases, the increasing dispersion of the coupling makes the GVD in the symmetric supermode more normal and suppresses the bandwidth of the MI gain observed for larger separations.

ORCID iDs

Ding, Wei, Staines, Owain K, Hobbs, Gareth D, Gorbach, Andriy V, De Nobriga, Charles, Wadsworth, William J, Knight, Jonathan C, Skryabin, Dmitry V, Strain, Michael ORCID logoORCID: https://orcid.org/0000-0002-9752-3144 and Sorel, M.;
CORE (COnnecting REpositories)