Unidirectional bistability in AlGaInAs microring and microdisk semiconductor lasers
Mezosi, G and Strain, M.J. and Furst, S and Wang, Z and Yu, S and Sorel, M. (2009) Unidirectional bistability in AlGaInAs microring and microdisk semiconductor lasers. IEEE Photonics Technology Letters, 21 (2). pp. 88-90.
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We report on room-temperature continuous-wave operation and single-mode lasing of microdisk and microring lasers with radii as small as 7 mum. The waveguide sidewall roughness was minimized by an optimized fabrication process using hydrogen silsesquioxane e-beam resist and Cl 2-CH 3-H 2 inductively coupled plasma etching. The devices show unidirectional bistability between the counterpropagating modes for radii larger than 30 mu m and a strong hybrid output polarization for radii smaller than 15 mum with a transverse-magnetic component of approximately 30%.
Creators(s): |
Mezosi, G, Strain, M.J. ![]() | Item type: | Article |
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ID code: | 44371 |
Keywords: | gallium arsenide, III-V semiconductors, microdisc lasers, sputter etching, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering |
Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
Department: | Faculty of Science > Physics > Institute of Photonics Faculty of Engineering > Design, Manufacture and Engineering Management |
Depositing user: | Pure Administrator |
Date deposited: | 29 Jul 2013 14:12 |
Last modified: | 20 Jan 2021 20:46 |
URI: | https://strathprints.strath.ac.uk/id/eprint/44371 |
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