Unidirectional bistability in AlGaInAs microring and microdisk semiconductor lasers

Mezosi, G and Strain, M.J. and Furst, S and Wang, Z and Yu, S and Sorel, M. (2009) Unidirectional bistability in AlGaInAs microring and microdisk semiconductor lasers. IEEE Photonics Technology Letters, 21 (2). pp. 88-90.

Abstract

We report on room-temperature continuous-wave operation and single-mode lasing of microdisk and microring lasers with radii as small as 7 mum. The waveguide sidewall roughness was minimized by an optimized fabrication process using hydrogen silsesquioxane e-beam resist and Cl 2-CH 3-H 2 inductively coupled plasma etching. The devices show unidirectional bistability between the counterpropagating modes for radii larger than 30 mu m and a strong hybrid output polarization for radii smaller than 15 mum with a transverse-magnetic component of approximately 30%.

ORCID iDs

Strain, M.J. ORCID: https://orcid.org/0000-0002-9752-3144

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  Item type:	Article
  ID code:	44371
  Dates:	Date Event 15 January 2009 Published
  Keywords:	gallium arsenide, III-V semiconductors, microdisc lasers, sputter etching, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Science > Physics > Institute of Photonics Faculty of Engineering > Design, Manufacture and Engineering Management
  Depositing user:	Pure Administrator
  Date deposited:	29 Jul 2013 14:12
  Last modified:	14 May 2021 03:08
  URI:	https://strathprints.strath.ac.uk/id/eprint/44371