Unidirectional bistability in AlGaInAs microring and microdisk semiconductor lasers

Mezosi, G and Strain, M.J. and Furst, S and Wang, Z and Yu, S and Sorel, M. (2009) Unidirectional bistability in AlGaInAs microring and microdisk semiconductor lasers. IEEE Photonics Technology Letters, 21 (2). pp. 88-90.

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Abstract

We report on room-temperature continuous-wave operation and single-mode lasing of microdisk and microring lasers with radii as small as 7 mum. The waveguide sidewall roughness was minimized by an optimized fabrication process using hydrogen silsesquioxane e-beam resist and Cl 2-CH 3-H 2 inductively coupled plasma etching. The devices show unidirectional bistability between the counterpropagating modes for radii larger than 30 mu m and a strong hybrid output polarization for radii smaller than 15 mum with a transverse-magnetic component of approximately 30%.

Creators(s): Mezosi, G, Strain, M.J. ORCID logoORCID: https://orcid.org/0000-0002-9752-3144, Furst, S, Wang, Z, Yu, S and Sorel, M.;
Item type:Article
ID code:44371
Keywords:gallium arsenide, III-V semiconductors, microdisc lasers, sputter etching, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering
Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
Department:Faculty of Science > Physics > Institute of Photonics
Faculty of Engineering > Design, Manufacture and Engineering Management
Depositing user: Pure Administrator
Date deposited:29 Jul 2013 14:12
Last modified:20 Jan 2021 20:46
URI:https://strathprints.strath.ac.uk/id/eprint/44371
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