Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Parrotta, Daniele Carmine and Lubeigt, Walter and Kemp, Alan and Burns, David and Dawson, Martin and Hastie, Jennifer (2011) Continuous-wave Raman laser pumped within a semiconductor disk laser cavity. Optics Letters, 36 (7). pp. 1083-1085. ISSN 0146-9592 (https://doi.org/10.1364/OL.36.001083)

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Abstract

A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

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• Item metadata

  Item type:	Article
  ID code:	42469
  Dates:	Date Event 1 April 2011 Published 18 March 2011 Published Online
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics > Institute of Photonics Technology and Innovation Centre > Sensors and Asset Management Technology and Innovation Centre > Photonics
  Depositing user:	Pure Administrator
  Date deposited:	07 Jan 2013 14:43
  Last modified:	08 Apr 2024 19:14
  URI:	https://strathprints.strath.ac.uk/id/eprint/42469