Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Parrotta, Daniele Carmine and Lubeigt, Walter and Kemp, Alan and Burns, David and Dawson, Martin and Hastie, Jennifer (2011) Continuous-wave Raman laser pumped within a semiconductor disk laser cavity. Optics Letters, 36 (7). pp. 1083-1085. ISSN 0146-9592 (https://doi.org/10.1364/OL.36.001083)

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Abstract

A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

ORCID iDs

Parrotta, Daniele Carmine ORCID logoORCID: https://orcid.org/0000-0002-5070-1062, Lubeigt, Walter, Kemp, Alan ORCID logoORCID: https://orcid.org/0000-0002-1076-3138, Burns, David, Dawson, Martin ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Hastie, Jennifer ORCID logoORCID: https://orcid.org/0000-0002-4066-7411;
CORE (COnnecting REpositories)