C-band emission from GaInNAsSbVCSEL on GaAS

Laurand, N. and Calvez, S. and Sun, H.D. and Dawson, M.D. and Gupta, J.A. and Aers, G.C. (2006) C-band emission from GaInNAsSbVCSEL on GaAS. Electronics Letters, 42 (1). pp. 29-30. ISSN 0013-5194 (http://dx.doi.org/10.1049/el:2006398)

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Abstract

The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

ORCID iDs

Laurand, N. ORCID logoORCID: https://orcid.org/0000-0003-0486-4300, Calvez, S., Sun, H.D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Gupta, J.A. and Aers, G.C.;
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