Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate
Tian, P. F. and Xie, E. Y. and Gong, Z. and Chen, Z. Z. and Yu, T. J. and Sun, Y. J. and Qi, S. L. and Chen, Y. J. and Zhang, Y. F. and Calvez, S. and Gu, Erdan and Zhang, Guoyi and Dawson, Martin; (2011) Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. In: Proceedings of the 2011 IEEE Photonics Conference. IEEE, USA, pp. 551-552. ISBN 9781424489404
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Abstract
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.
Creators(s): |
Tian, P. F., Xie, E. Y. ![]() ![]() ![]() | Item type: | Book Section |
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ID code: | 42041 |
Keywords: | GaN, AuSn, vertical structure LEDs, LEDS, flexible optoelectronics, bonding, Substrates , Optical imaging , optical device fabrication, light emitting diodes , gold, flexible vertical structure , GaN-based light emitting diodes , Physics |
Subjects: | Science > Physics |
Department: | Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics Faculty of Engineering > Electronic and Electrical Engineering Technology and Innovation Centre > Photonics |
Depositing user: | Pure Administrator |
Date deposited: | 14 Nov 2012 14:26 |
Last modified: | 20 Jan 2021 15:29 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/42041 |
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