Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

Tian, P. F. and Xie, E. Y. and Gong, Z. and Chen, Z. Z. and Yu, T. J. and Sun, Y. J. and Qi, S. L. and Chen, Y. J. and Zhang, Y. F. and Calvez, S. and Gu, Erdan and Zhang, Guoyi and Dawson, Martin (2011) Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. In: Proceedings of the 2011 IEEE Photonics Conference. IEEE, New York, pp. 551-552. ISBN 9781424489404

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Abstract

By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

Author(s):Tian, P. F., Xie, E. Y., Gong, Z., Chen, Z. Z., Yu, T. J., Sun, Y. J., Qi, S. L., Chen, Y. J., Zhang, Y. F., Calvez, S., Gu, Erdan, Zhang, Guoyi and Dawson, Martin
Item type:Book Section
ID code:42041
Keywords:GaN, AuSn, vertical structure LEDs, LEDS, flexible optoelectronics, bonding, Substrates , Optical imaging , optical device fabrication, light emitting diodes , gold, flexible vertical structure , GaN-based light emitting diodes , Physics
Subjects:Science > Physics
Department:Faculty of Science > Physics
Faculty of Science > Physics > Institute of Photonics
Faculty of Engineering > Electronic and Electrical Engineering
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date deposited:14 Nov 2012 14:26
Last modified:03 Jan 2019 13:32
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URI:https://strathprints.strath.ac.uk/id/eprint/42041
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