Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

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Tian, P. F. and Xie, E. Y. and Gong, Z. and Chen, Z. Z. and Yu, T. J. and Sun, Y. J. and Qi, S. L. and Chen, Y. J. and Zhang, Y. F. and Calvez, S. and Gu, Erdan and Zhang, Guoyi and Dawson, Martin; (2011) Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. In: Proceedings of the 2011 IEEE Photonics Conference. IEEE, USA, pp. 551-552. ISBN 9781424489404 (https://doi.org/10.1109/PHO.2011.6110666)

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Abstract

By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

ORCID iDs

Tian, P. F., Xie, E. Y. ORCID logoORCID: https://orcid.org/0000-0001-7776-8091, Gong, Z., Chen, Z. Z., Yu, T. J., Sun, Y. J., Qi, S. L., Chen, Y. J., Zhang, Y. F., Calvez, S., Gu, Erdan ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Zhang, Guoyi and Dawson, Martin ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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