Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

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Yong, J.C.L. and Rorison, J.M. and Othman, M. and Sun, H.D. and Dawson, M.D. and Williams, K.A. (2003) Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. IEE Proceedings Optoelectronics, 150 (1). pp. 80-82. ISSN 1350-2433 (http://dx.doi.org/10.1049/ip-opt:20030048)

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Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

ORCID iDs

Yong, J.C.L., Rorison, J.M., Othman, M., Sun, H.D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Williams, K.A.;
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