A diamond-microchip GaInNAs VECSEL operating at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A. and Burns, D. and Dawson, M.D. (2004) A diamond-microchip GaInNAs VECSEL operating at 1315nm. In: IEEE-LEOS Annual Meeting, 2004-11-07 - 2004-11-11. (https://doi.org/10.1109/LEOS.2004.1363245)

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Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

ORCID iDs

Smith, S.A., Hopkins, J.M., Hastie, J.E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411, Calvez, S., Kemp, A. ORCID logoORCID: https://orcid.org/0000-0002-1076-3138, Burns, D. and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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