High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

Kuszelewicz, R. and Benoit, J.-M. and Barbay, S. and Lemaitre, A. and Patriarche, G. and Meunier, K. and Tierno, Alessio and Ackemann, Thorsten (2012) High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities. Journal of Applied Physics, 111. 043107. ISSN 0021-8979 (https://doi.org/10.1063/1.3682466)

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Abstract

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy, temperature- and time resolvedphotoluminescence. The control of the recombination lifetime (50 ps – 1.25 ns), and of the dot density (5.10−8 – 2.1011 cm−3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non linear dispersive materials as well as fast saturable absorbers.

ORCID iDs

Kuszelewicz, R., Benoit, J.-M., Barbay, S., Lemaitre, A., Patriarche, G., Meunier, K., Tierno, Alessio and Ackemann, Thorsten ORCID logoORCID: https://orcid.org/0000-0003-2727-7395;
CORE (COnnecting REpositories)