Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

Rice, G.B. and Jones, D.R. and Kim, K.S. and Girkin, J.M. and Jarozynski, D. and Dawson, M.D. (2003) Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses. Proceedings of SPIE the International Society for Optical Engineering, 5147. pp. 299-307. ISSN 0277-786X (https://doi.org/10.1117/12.543662)

Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

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• Item metadata

  Item type:	Article
  ID code:	37253
  Dates:	Date Event 2003 Published
  Notes:	Alt02 International Conference on Advanced Laser Technologies (2003)
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Pure Administrator
  Date deposited:	31 Jan 2012 16:00
  Last modified:	08 Apr 2024 16:32
  URI:	https://strathprints.strath.ac.uk/id/eprint/37253