Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

Rice, G.B. and Jones, D.R. and Kim, K.S. and Girkin, J.M. and Jarozynski, D. and Dawson, M.D. (2003) Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses. Proceedings of SPIE the International Society for Optical Engineering, 5147. pp. 299-307. ISSN 0277-786X (https://doi.org/10.1117/12.543662)

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Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

ORCID iDs

Rice, G.B., Jones, D.R., Kim, K.S., Girkin, J.M., Jarozynski, D. and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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