Low-energy electron-beam irradiation of GaN-based quantum well structures

Jahn, U. and Dhar, S. and Kostial, H. and Waltereit, P. and Scholz, F. and Watson, I.M. and Fujiwara, K. (2003) Low-energy electron-beam irradiation of GaN-based quantum well structures. Physica Status Solidi C. pp. 2223-2226. ISSN 1610-1642

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The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.


Jahn, U., Dhar, S., Kostial, H., Waltereit, P., Scholz, F., Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993 and Fujiwara, K.;